A new precipitate phase in Al-4wt. % Cu thin-film interconnects |
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Authors: | W C Shih A L Greer |
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Affiliation: | (1) Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, CB2 3QZ Cambridge, United Kingdom |
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Abstract: | We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects
on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation
of electron diffraction intensities suggests that the basis structure is isomorphous with Al2Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its
implications for electromigration reliability are discussed. |
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Keywords: | Al− Ca interconnects precipitates transmission electron microscopy (TEM) |
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