| 快速升温法制备CdS纳米带的生长机理研究 |
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| 引用本文： | 王志俊,陶锋,刘伟丰,姚连增,蔡维理. 快速升温法制备CdS纳米带的生长机理研究[J]. 无机材料学报, 2006, 21(6): 1357-1361. DOI: 10.3724/SP.J.1077.2006.01357 |
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| 作者姓名： | 王志俊 陶锋 刘伟丰 姚连增 蔡维理 |
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| 作者单位： | (中国科学技术大学材料科学与工程系, 合肥 230026) |
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| 摘 要： | 在无任何催化剂的条件下, 采用快速升温法在单晶硅衬底上制备了高质量的、形貌均匀的CdS纳米带. X射线衍射(XRD)、透射电镜(TEM)和场发射扫描电镜(FESEM)分析显示, 纳米带属六方单晶结构, 生长方向为[001]. 讨论了纳米带形成的机理, 认为CdS纳米带状六方结构的形成, 主要是由于生长速度的各向异性及在沉积区具有较低的过饱和度和较高的沉积温度等因素导致.
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| 关 键 词： | CdS 纳米带 生长机理 |
| 文章编号： | 1000-324X（2006）05-1357-05 |
| 收稿时间： | 2005-11-07 |
| 修稿时间： | 2005-11-072006-01-03 |
Growth Mechanism of CdS Nanobelts |
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| WANG Zhi-Jun,TAO Feng,LIU Wei-Feng,YAO Lian-Zeng,CAI Wei-Li. Growth Mechanism of CdS Nanobelts[J]. Journal of Inorganic Materials, 2006, 21(6): 1357-1361. DOI: 10.3724/SP.J.1077.2006.01357 |
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| Authors: | WANG Zhi-Jun TAO Feng LIU Wei-Feng YAO Lian-Zeng CAI Wei-Li |
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| Affiliation: | (Department of Materials Science and Engineering, University of
Science and Technology of China, Hefei 230026, China) |
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| Abstract: | The CdS nanobelts with high quality and even morphology were fabricated via a rapid evaporation route on Si substrate without any catalyst. XRD, TEM and SEM investigations reveal that the as-prepared samples are single-crystals of CdS nanobelts with a hexagonal wurtzite structure growing along the [001] direction. The VS model is proposed for the growth mechanism of CdS nanobelts. |
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| Keywords: | CdS |
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