Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer |
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| Authors: | HUANG Ping-yang XIAO Long-fei CHEN Xiu-fang WANG Qing-pu XU Ming-sheng XU Xian-gang HUANG Jing |
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| Affiliation: | Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China,State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China,State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China,Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China,Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, China,State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China and School of Mechatronics Engineering, Guizhou Minzu University, Guiyang 550025, China |
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| Abstract: | The low internal quantum efficiency (IQE) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low IQE include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the IQE of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs. |
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