Mobility enhancement in surface channel SiGe PMOSFETs with HfO/sub 2/ gate dielectrics |
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| Authors: | Zhonghai Shi Onsongo D Onishi K Lee JC Banerjee SK |
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| Affiliation: | Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA; |
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| Abstract: | We report for the first time drive current enhancement and higher mobilities than the universal mobility for SiO/sub 2/ on Si in compressively strained Si/sub 1-x/Ge/sub x/-on-Si surface channel PMOSFETs with HfO/sub 2/ gate dielectrics, for gate lengths (L/sub G/) down to 180 nm. Thirty six percent drive current enhancement was achieved for Si/sub 0.8/Ge/sub 0.2/ channel PMOSFETs compared to Si PMOSFETs with HfO/sub 2/ gate dielectric. We demonstrate that using Si/sub 1-x/Ge/sub x/ in the channel may be one way to recover the mobility degradation due to the use of HfO/sub 2/ on Si. |
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