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The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well |
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| Authors: | E N Morozova O N Makarovskii V A Volkov Yu V Dubrovskii L Turyanska E E Vdovin A Patané L Eaves M Henini |
| Affiliation: | (1) Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia;(2) The School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK;(3) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, 125009, Russia |
| Abstract: | The effect of InAs quantum dots (QDs) grown in the center of a GaAs quantum well on the tunneling characteristics of resonant-tunneling diodes based on p-AlAs/GaAs/AlAs heterostructures is studied. The introduction of QDs results in a shift and broadening of resonance peaks in the current-voltage characteristics of the diodes; however, this effect is found to be strongly dependent on the number of the 2D subband involved in the tunneling. The obtained dependence is attributed to origination of the fluctuation potential in the vicinity of the QD layer. |
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