Interfacial reaction and adhesion between SiC and thin sputtered nickel films |
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Authors: | C S Lim H Nickel A Naoumidis E Gyarmati |
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Affiliation: | (1) Research Center Julich, Institute for Materials in Energy Systems, D-52425 Julich, Germany |
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Abstract: | Thin sputtered nickel films grown on SiC were annealed in an Ar/4 vol % H2 atmosphere at temperatures between 550 to 1450
°C for various times. The reactivity and the reaction-product morphology were characterized using optical microscopy, surface
profilometry, X-ray diffraction, scanning electron microscopy and electron probe microanalysis. The reaction with the formation
of silicides and carbon was observed to first occur above 650 °C. Above 750 °C, as the reaction proceeded, the initially formed
Ni3Si2 layer was converted to Ni2Si and carbon precipitates were observed within this zone. The thin nickel film reacted completely
with SiC after annealing at 950 °C for 2 h. The thermodynamically stable Ni2Si is the only observed silicide in the reaction
zone up to 1050 °C. Above 1250 °C, carbon precipitated preferentially on the outer surface of the reaction zone and crystallized
as graphite. The relative adhesive strength of the reaction layers was qualitatively compared using the scratch test method.
At temperatures between 850 to 1050 °C the relatively higher critical load values of 20–33 N for SiC/Ni couples are formed.
This revised version was published online in November 2006 with corrections to the Cover Date. |
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