Computer calculation of silicon avalanche diodes

The efficiency η and output power P per unit area were computed for silicon p-n-n⁺avalanche diodes having an active region of 5 microns. The condition for making both η andPmaximum is that the field at the n-n⁺interface generated by impurity and bias voltage is about one fourth of that at the junction under oscillation conditions. The maximum η andPwere calculated to be about 20.5 per cent and 53 kW/cm². Dc current density J0for maximumPwas about 4200 A/cm². On the other hand, J0for maximum η was calculated to be about 800 A/cm². It was found that a diode having an abrupt type junction is the best. The condition under which a diode is represented by use of a diode with abrupt type junction is that the region of a homogeneous field near the junction is less than one fifth of the space-charge region.