Effect of doping profile on avalanche noise of silicon IMPATT diodes |
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| Authors: | Vollmann E. |
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| Affiliation: | Technische Universit?t München, Institut für Technische Elektronik, München, West Germany; |
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| Abstract: | The open-circuit spectral noise-voltage density e2/?f of silicon IMPATT diodes with different punchthrough factors has been measured. A noise reduction has been obtained for diodes with punchthrough factors > 1. This is in agreement with theoretical curves calculated on the basis of the noise theory of Gummel and Blue. |
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