Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization

Key aspects related to the localization of the hot-carrier induced damage in short channel MOSFET's are reviewed. Emphasis is put on the analysis, modeling and characterization of the degradation of device parameters caused by defects created locally beside the drain junction. Numerical simulations as well as analytical models predicting the post-stress performance are presented, compared and their limits of validity highlighted. Relevant experimental results, concerning the evolution of the static characteristics I_D(V_G, V_D) during transistor aging, are thoroughly discussed and efficient methods for the extraction of the defective region parameters are proposed. More specific techniques (charge pumping, noise spectroscopy, floating gate current, gated diode leakage), used for the characterization of aging induced defects, are evaluated from the point of view of their capability to cope with the localized nature of the defects. The merits of silicon on insulator structures and other technological solutions proposed for the attenuation of hot carrier effects are briefly commented.