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SiGe differential transimpedance amplifier with 50-GHz bandwidth
Authors:Weiner   J.S. Leven   A. Houtsma   V. Baeyens   Y. Young-Kai Chen Paschke   P. Yang Yang Frackoviak   J. Wei-Jer Sung Tate   A. Reyes   R. Kopf   R.F. Weimann   N.G.
Affiliation:Lucent Technol., Bell Labs., Murray Hill, NJ, USA;
Abstract:InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-/spl Omega/ transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA//spl radic/Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-/spl Omega/ transimpedance and 49-GHz bandwidth.
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