SiGe differential transimpedance amplifier with 50-GHz bandwidth |
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Authors: | Weiner J.S. Leven A. Houtsma V. Baeyens Y. Young-Kai Chen Paschke P. Yang Yang Frackoviak J. Wei-Jer Sung Tate A. Reyes R. Kopf R.F. Weimann N.G. |
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Affiliation: | Lucent Technol., Bell Labs., Murray Hill, NJ, USA; |
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Abstract: | InP and SiGe technologies are both attractive for design of circuits operating at 40 GB/s and beyond. In this paper, we describe a fully differential SiGe transimpedance amplifier (TIA) suitable for differential phase-shift keying applications. The TIA exhibits 49 dB-/spl Omega/ transimpedance, greater than 50-GHz bandwidth, and input-referred current noise less than 30 pA//spl radic/Hz. For comparison, we have also developed a similar TIA in an InP double-heterostructure bipolar transistor technology. The InP TIA had 48 dB-/spl Omega/ transimpedance and 49-GHz bandwidth. |
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