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Optical gain in 1.3-μm electrically driven dilute nitride VCSOAs |
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| Authors: | Sefer Bora Lisesivdin Nadir Ali Khan Simone Mazzucato Naci Balkan Michael John Adams Ville-Markus Korpij?rvi Mircea Guina Gabor Mezosi Marc Sorel |
| Affiliation: | 1.School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park CO4 3SQ, UK;2.Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, Ankara 06500, Turkey;3.Optoelectronics Research Centre (ORC), Tampere University of Technology, P.O. Box 692, Tampere 33101, Finland;4.School of Engineering, University of Glasgow, Glasgow GG12 8QQ, UK;5.Kohat University of Science and Technology (KUST), Kohat, Khyber Pakhtoonkhwa, Pakistan |
| Abstract: | We report the observation of room-temperature optical gain at 1.3 μm in electrically driven dilute nitride vertical cavity semiconductor optical amplifiers. The gain is calculated with respect to injected power for samples with and without a confinement aperture. At lower injected powers, a gain of almost 10 dB is observed in both samples. At injection powers over 5 nW, the gain is observed to decrease. For nearly all investigated power levels, the sample with confinement aperture gives slightly higher gain. |
| Keywords: | Dilute nitride Optical injection Gain Vertical cavity semiconductor optical amplifiers |