Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memories

Enhanced resistive switching phenomena of IrO_x/GdO_x/W cross-point memory devices have been observed as compared to the via-hole devices. The as-deposited Gd₂O₃ films with a thickness of approximately 15 nm show polycrystalline that is observed using high-resolution transmission electron microscope. Via-hole memory device shows bipolar resistive switching phenomena with a large formation voltage of -6.4 V and high operation current of >1 mA, while the cross-point memory device shows also bipolar resistive switching with low-voltage format of +2 V and self-compliance operation current of <300 μA. Switching mechanism is based on the formation and rupture of conducting filament at the IrO_x/GdO_x interface, owing to oxygen ion migration. The oxygen-rich GdO_x layer formation at the IrO_x/GdO_x interface will also help control the resistive switching characteristics. This cross-point memory device has also Repeatable 100 DC switching cycles, narrow distribution of LRS/HRS, excellent pulse endurance of >10,000 in every cycle, and good data retention of >10⁴ s. This memory device has great potential for future nanoscale high-density non-volatile memory applications.