A new process of grid structure formation for end point detection during substrate thinning of transit time devices

The influence of u.v. exposure on developed positive resist pattern followed by hard baking and etching at low temperature has been utilized in the present work to produce grid structures without using metal pattern mask during substrate thinning of transit time devices. The present process eliminates one step of metallization which is required in the conventional method, and this reduces the overall cost of fabrication. The process reported in this paper can be used in selective etching of silicon in other areas of device fabrication as well.