| 溅射法制备SmS薄膜的XRD研究 |
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| 引用本文： | 黄剑锋,曹丽云,熊信伯,沈清,罗宏杰,金平. 溅射法制备SmS薄膜的XRD研究[J]. 武汉理工大学学报, 2003, 25(5): 23-26 |
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| 作者姓名： | 黄剑锋 曹丽云 熊信伯 沈清 罗宏杰 金平 |
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| 作者单位： | 1. 陕西科技大学
2. 西北工业大学 |
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| 摘 要： | 分别采用Sm2S3的单靶溅射法和Sm—Sm2S3的双靶溅射法，于单晶Si基板上制备了常温常压下稳定存在的S—SmS和M—SmS微晶薄膜，并采用卢瑟福背散射仪及薄膜X—射线衍射仪系统地研究了基板温度和溅射功率对薄膜微晶结构的影响规律。
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| 关 键 词： | 溅射 SmS薄膜 X－射线衍射 |
| 文章编号： | 1671-4431(2003)05-0023-04 |
| 修稿时间： | 2002-12-02 |
XRD Analysis of SmS Thin Films Deposited by Sputtering |
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| Abstract: | The metallic phase SmS(M-SmS) and semiconductive phase SmS(S-SmS) thin films stable at ambient atmosphere were deposited on Si(100) substrate by sputtering with a single target of Sm_2S_3 and dual-target of Sm_2S_3 and Sm. X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS) were employed to analyze the crystalline structure of the films deposited at different substrate temperature and sputtering power. |
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| Keywords: | sputtering SmS thin film X-ray diffraction |
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