Electronic characteristics of the singly ionized pair of phosphorus donors in silicon and operations with charge qubits

The electron energy spectrum of the singly ionized pair of phosphorus donors in silicon, P ₂ ⁺ , is calculated numerically, taking into account the sixfold degeneracy of the conduction band. The envelopes of wave functions of different states are determined. The results are used to simulate operations with the P ₂ ⁺ /Si-based charge qubits via exposure to laser pulses.