Gain-coupled strained layer MQW-DFB lasers with an essentiallysimplified fabrication process for λ=1.55 μm |
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| Authors: | Rast A Johannes TW Harth W Rieger J |
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| Affiliation: | Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Tech. Univ. Munchen; |
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| Abstract: | A gain-coupled (GC) strained-layer (SL) multi-quantum-well (MQW) distributed-feedback (DFB) laser with a metallized surface grating and a substantially simplified fabrication process made by single-step epitaxy without corrugation overgrowth is described. The complex coupling coefficient can be adjusted by the contact metallization. Room-temperature single-mode continuous-wave (CW) operation with a threshold current of 22 mA, an output power of 20 mW, and a linewidth of 2.5 MHz is demonstrated |
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