Low-cost trench isolation technique for reverse blocking IGBT using boron nitride doping wafers |
| |
Authors: | M. Vellvehi,J.L. Gá lvez,X. Jordà ,J. Millá n |
| |
Affiliation: | a Institut de Microelectrònica de Barcelona, Centre Nacional de Microelectrònica (IMB-CNM, CSIC), Campus U.A.B. 08193 Cerdanyola del Vallès (Barcelona), Spain b Institut de Ciències de l’Espai (IEEC, CSIC), Campus U.A.B. 08193 Cerdanyola del Vallès (Barcelona), Spain |
| |
Abstract: | A new fabrication process for IGBT devices with reverse blocking capability (RB-IGBT) is presented in this paper. The trench isolation approach which provides the reverse blocking capability has been implemented using solid source as doping technique (Boron doping wafers), resulting in a low-cost process in both starting material and time-consuming aspects. The feasibility of the fabrication technique has been validated with the electrical measurements of the prototype devices. |
| |
Keywords: | IGBT Reverse blocking AC/AC converter Matrix Converter |
本文献已被 ScienceDirect 等数据库收录! |
|