Fabrication of a two-step Ni stamp for blind via hole application on PWB |
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Authors: | In-Soo Park Seong-Hun Na Young-Soo Oh |
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Affiliation: | a School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon City 300, Republic of Korea b eMD_Center, Central R&D Laboratory, Samsung Electro-Mechanics, Suwon, Gyeonggi-do 443-743, South Korea |
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Abstract: | This study examined imprint lithography with a two-step Ni stamp to solve the laser process problems and simultaneously form a blind via and layer pattern. The Ni stamp was fabricated by electroplating on a dry-etched Si mold, made from a SOI (silicon on insulator) wafer, and pattern replication. For the pattern transfer of the Ni stamp, hot embossing was performed on SU8-coated BT and Si wafer substrates. The residual layer was of a uniform thickness with an embossed shape of acceptable squareness. |
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Keywords: | Two-step stamp Blind via hole Hot embossing |
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