Current-voltage characteristics of p-Si/carbon junctions fabricated by pulsed laser deposition |
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Authors: | R.K. Gupta K. Ghosh P.K. Kahol |
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Affiliation: | Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO 65897, USA |
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Abstract: | Amorphous carbon/p-Si junctions were fabricated at different temperatures using KrF excimer laser (λ = 248 nm, pulsed duration 20 ns). The current-voltage measurements of the devices showed diode characteristics. The value of various junction parameters such as ideality factor, barrier height, and series resistance were determined from forward bias I-V characteristics, Cheung method, and Norde’s function. There was a good agreement between the diodes parameters obtained from these methods. The ideality factor of ∼1.12 and barrier height of ∼0.37 eV were estimated using current-voltage characteristics for films grown at room temperature. |
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Keywords: | Carbon Pulsed laser Thin films Junction parameters |
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