Suppression of corner effects in wide-channel triple-gate bulk FinFETs

This paper presents a method of eliminating corner effects in triple-gate bulk FinFETs. The parasitic device in FinFET’s corners can be turned off by increasing body doping in corner regions by corner implantation. Corner implantation described in this work does not require additional masks, rotation or tilt. This method is investigated in idealized (with rectangular cross-section of the fin) and realistic (with rounded top corners of the fin) triple-gate bulk FinFETs and has shown considerable improvements: kink effect in transfer characteristics is completely eliminated, threshold voltage increased by up to 0.43 V, subthreshold swing and drain-induced barrier-lowering decreased to values under 95 mV/dec and 16 mV/V, respectively. Optimization is performed on the realistic rounded-corner FinFET structure to find the proper body doping and corner implantation peak values for acceptable threshold voltage and on-state current.