Effect of a surface pre-treatment on graphene growth using a SiC substrate |
| |
Authors: | Jun-Ho Seo Jeong Hun Mun Byung Jin Cho |
| |
Affiliation: | a Department of Electrical Engineering, KAIST, Daejeon 305-701, Republic of Korea b National Nano Fab Center (NNFC), Daejeon 305-701, Republic of Korea |
| |
Abstract: | This study reports surface pre-treatment techniques for the formation of a high-quality graphene layer on a SiC surface. It is demonstrated that silicon passivation of SiC surface using a silane flow and subsequent sacrificial oxidation can significantly improve the surface condition of a graphene layer on SiC by ensuring much fewer carbon dumps and wrinkles, reducing the electrical resistance, and providing smoother surface roughness and a larger domain size. The effect of in situ cleaning by a SF6 treatment before graphitization was also studied. It was found that in situ cleaning using SF6 gas can be a simple and effective means of improving the quality of a graphene layer grown on SiC. The results of this study suggest that a surface treatment before graphitization is the key to synthesize high-quality epitaxial graphene layer. |
| |
Keywords: | Graphene Surface passivation Silane treatment Sacrificial oxidation Sulfur hexafluoride (SF6) |
本文献已被 ScienceDirect 等数据库收录! |