Characterization of UV photodetectors with MgxZn1−xO thin films |
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Authors: | Tung-Te Chu Liang-Wen Ji Wei-Shun Shi Teen-Hang Meen |
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Affiliation: | a Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan b National Key Lab of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, PR China |
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Abstract: | In this study the metal-semiconductor-metal (MSM) structure ultraviolet (UV) photodetectors (PDs) based on MgxZn1−xO thin films were fabricated. The MgxZn1−xO thin films were grown on glass substrates by sol-gel method. The results show that the optical absorption has a blue shift and higher transmittance with increasing Mg dopant. The optical band gap were modified by 3.28-3.52 eV, which corresponded to x = 0 and x = 0.16. For a 10 V applied bias, the dark currents of the MgxZn1−xO MSM-PDs were 637 nA (x = 0) to 0.185 nA (x = 0.16) and showed good Schottky contacts. This UV-visible rejection ratio of the MgxZn1−xO UV PDs at x = 0, 0.16, 0.21 and 0.33 were 18.82, 35.36, 40.91 and 42.92, respectively. |
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Keywords: | Ultraviolet Photodetectors Schottky contacts Sol-gel method Blue shift |
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