Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation |
| |
Authors: | Miin-Horng Juang C.W. Huang C.C. Hwang D.C. Shye |
| |
Affiliation: | a Department of Electronic Engineering, National Taiwan University of Science and Technology, Kee-Lung Rd., 106 Taipei, Taiwan b Department of Electronic Engineering, Ming-Chi University of Technology, Tai-Shan, Taipei, Taiwan |
| |
Abstract: | Excellent n-channel poly-Si thin-film transistors (poly-Si TFTs) have been formed by using retrograde channel scheme with channel doping implantation and extra counter-doping implantation. As compared to the conventional sample with undoped channel layer, a much smaller leakage current can be achieved by boron-doping the poly-Si channel layer, due to a significantly reduced depletion region. However, the on-state characteristics are degraded. A retrograde channel scheme, implemented by further phosphorus counter-doping the surface of the boron-doped channel layer, is proposed for lowering the channel surface doping concentration without changing the bulk channel doping concentration. By using the retrograde channel scheme, an off-state leakage current as low as that for the normal channel-doping scheme may be achieved, while yielding excellent on-state I-V transfer characteristics. |
| |
Keywords: | Polycrystalline-Si thin-film transistors Retrograde channel Leakage current |
本文献已被 ScienceDirect 等数据库收录! |
|