| 硅栅CMOS磁敏器件的研制 |
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| 引用本文： | 魏同立,何野,沈克强. 硅栅CMOS磁敏器件的研制[J]. 固体电子学研究与进展, 1987, 0(4) |
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| 作者姓名： | 魏同立 何野 沈克强 |
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| 作者单位： | 南京工学院微电子中心(魏同立，何野)，南京工学院微电子中心(沈克强) |
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| 摘 要： | 本文用标准硅栅CMOS工艺研制了CMOS磁敏器件,用霍尔角解释了器件工作原理,所提出的理论与实验结果相符合。在此基础上给出了高灵敏度器件的几何结构,并提出了实际应用CMOS磁敏器件的设计方案。
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Investigation and Fabrication of Silicon-Gate CMOS Magnetic Field Sensor |
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| Abstract: | A magnetic field sensitive device is made by the standard poly-silicon-gate CMOS technology. In this paper the oparation mechanism of the device is explained by introducing Hall angle. The theory presented here is in good agreement with experiments. Based on the above analysis, a geometry of the device with high sensitivity and a design scheme of practical CMOS magnetic field Sensor are proposed. |
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