Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements |
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Authors: | R. Gul K. Keeter R. Rodriguez A.E. Bolotnikov A. Hossain G.S. Camarda K.H. Kim G. Yang Y. Cui V. Carcelen J. Franc Z. Li R.B. James |
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Affiliation: | 1. Brookhaven National Laboratory, Upton, NY, 11973, USA 2. Idaho State University, Pocatello, ID, 83209, USA 3. Universidad Aut??noma de Madrid, Madrid, Spain 4. Charles University, Prague, Czech Republic
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Abstract: | We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48?eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[PbCd]+-V Cd 2? ]?. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36?meV and a deep donor trap at around 0.82?eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18?eV (A-centers) and 0.31?eV (VCd), and a deep trap at around 1.1?eV. |
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