辅助气体对分阶段制备金刚石膜的影响

采用形核 甲烷/氢气生长-辅助气体/甲烷/氢气生长的新工艺，在镜面抛光的单晶硅片上制备了金刚石膜，并用扫描电子显微镜和激光拉曼光谱等测试方法对薄膜的表面形貌和质量性能进行了表征；研究了添加辅助气体对已有金刚石晶型生长的影响.结果表明:以甲烷/氢气为气源时，金刚石膜生长率一般为1.8 μm/h，当分别加入氧气、二氧化碳、氮气时，其生长率都有所提高，其中加入二氧化碳时，其生长率是甲烷/氢气为气源的3倍多，但是加入氩气时，其生长率下降;通过新工艺，在加入氮气或氩气时，第一生长阶段为微米，而第二生长阶段为纳米尺寸，最后制备出具有微/纳米双层复合金刚石膜.

Influence of auxiliary gas on stage growth of diamond films

Diamond films were deposited on the mirror-polished monocrystalline silicon substrate using a new deposition process of nucleation-methane/hydrogen growth-auxiliary gas/methane/hydrogen growth. The effects of different auxiliary gases on the stage growth of the diamond films were investigated. Scanning electron microscope and Raman spectroscopy were used to detect the surface morphology and the quality of diamond films. The results show that the growth rate of diamond film is 1.8 μm/h using methane/hydrogen mixture; the growth rate of diamond film increases when oxygen, carbon dioxide and nitrogen are added into the methane/hydrogen mixture, respectively, in which the growth rate of diamond film after adding carbon dioxide is over 3 times than that of using methane/hydrogen mixture; but the growth rate of diamond film decreases after adding the argon. Micro-diamond is formed in the first stage of diamond film growth,while the nano-diamond is formed in the second stage of diamond film growth. Finally, a micro-nanocrystalline dual layer diamond film is obtained by using the new process.