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渐变应变偏振不灵敏半导体光学放大器
引用本文:张瑞英,董杰,冯志伟,周帆,王鲁峰,王圩.渐变应变偏振不灵敏半导体光学放大器[J].半导体学报,2002,23(10):1102-1105.
作者姓名:张瑞英  董杰  冯志伟  周帆  王鲁峰  王圩
作者单位:1. 中国科学院半导体研究所,国家光电子工艺中心,北京,100083;2. 长春光机学院,长春,130022
基金项目:国家重点基础研究发展计划(973计划);G20000683-1;
摘    要:采用渐变应变有源区结构,制备出偏振不灵敏半导体光学放大器,工作电流在60~160mA范围内,其3dB带宽范围不小于35nm,偏振不灵敏度小于0.35dB,自发发射出光功率为0.18~3.9mW.

关 键 词:应变渐变结构  半导体光学放大器  大带宽  偏振不灵敏
文章编号:0253-4177(2002)10-1102-04
修稿时间:2002年1月22日

Graded Strain Bulk-Like Polarization-Insensitive Semiconductor Optical Amplifier with Large Bandwidth
Zhang Ruiying ,Dong Jie ,Feng Zhiwei ,Zhou Fan ,Wang Lufeng and Wang Wei.Graded Strain Bulk-Like Polarization-Insensitive Semiconductor Optical Amplifier with Large Bandwidth[J].Chinese Journal of Semiconductors,2002,23(10):1102-1105.
Authors:Zhang Ruiying  Dong Jie  Feng Zhiwei  Zhou Fan  Wang Lufeng and Wang Wei
Affiliation:Zhang Ruiying 1,Dong Jie 1,Feng Zhiwei 2,Zhou Fan 1,Wang Lufeng 1 and Wang Wei 1
Abstract:It is the first time in the world that graded tensile strained bulk-like active structure is induced to fabricate semiconductor optical amplifier.Large 3dB bandwidth of more than 35nm and polarization insensitivity of less than 0.35dB are measured when the injection current from 60mA to 160mA.And the corresponding spontaneous emission output power varies from 0.18mW to 3.9mW.
Keywords:graded tensile strained bulk-like structure  semiconductor optical amplifier  large width  polarization insensitive
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