| Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition |
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| 引用本文： | DA Xiao-li XU Chen GUAN Bao-lu SHEN Guang-di. Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition[J]. 半导体光子学与技术, 2007, 13(2): 141-145 |
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| 作者姓名： | DA Xiao-li XU Chen GUAN Bao-lu SHEN Guang-di |
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| 作者单位： | Institute of Electronic Information and Control Engineering, Beijing Optoelectronic Technology Lab, Beijing University of Technology, Beijing 100022, CHN |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，Academic Human Resources Development in Institutions of Higher Learning Under the Jurisdiction of Beijing Municipality |
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| 摘 要： | SiN, films are deposited on silicon wafers through plasma enhanced chemical vapor deposition （PECVD）. The relationship between the film stress and deposition factors is investigated. It is found that low stress films would be obtained by adjusting the ratio of low frequency（LF） power to high frequency（HF） power pulse time or the chamber pressure. The best of the two methods to control stress in the film is changing the percentage of LF power pulse time. The low stress condition is achieved when the percentage of low frequency power pulse time in total time（LF and HF pulse time） is close to 40%, The low stress cantilever of tunable vertical cavity surface emitting laser is obtained by using this deposition condition,
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| 关 键 词： | 等离子体增强化学汽相沉积 SiN薄膜 应力控制 压力 |
| 文章编号： | 1007-0206（2007）02-0141-05 |
| 收稿时间： | 2006-12-14 |
Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition |
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| DA Xiao-li,XU Chen,GUAN Bao-lu,SHEN Guang-di. Stress Controlled Silicon Nitride Thin Film Deposited by Plasma Enhanced Chemical Vapour Deposition[J]. Semiconductor Photonics and Technology, 2007, 13(2): 141-145 |
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| Authors: | DA Xiao-li XU Chen GUAN Bao-lu SHEN Guang-di |
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| Abstract: | SiNx films are deposited on silicon wafers through plasma enhanced chemical vapor deposition(PECVD).The relationship between the film stress and deposition factors is investigated.It is found that low stress films would be obtained by adjusting the ratio of low frequency(LF) power to high frequency(HF) power pulse time or the chamber pressure.The best of the two methods to control stress in the film is changing the percentage of LF power pulse time.The low stress condition is achieved when the percentage of low frequency power pulse time in total time(LF and HF pulse time) is close to 40%.The low stress cantilever of tunable vertical cavity surface emitting laser is obtained by using this deposition condition. |
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| Keywords: | film stress SiNx pressure radio frequency power cantilever |
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