Low-threshold high-T/sub 0/ 1.3-/spl mu/m InAs quantum-dot lasers due to p-type modulation doping of the active region |
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| Authors: | Shchekin OB Deppe DG |
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| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
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| Abstract: | P-type doping is used to demonstrate high-To, low-threshold 1-3 /spl mu/m InAs quantum-dot lasers. A 5-/spl mu/m-wide oxide confined stripe laser with a 700-/spl mu/m-long cavity exhibits a pulsed T/sub 0/ = 213 K (196 K CW) from 0/spl deg/C to 80/spl deg/C. At room temperature, the devices have a CW threshold current of /spl sim/4.4 mA with an output power over 15 mW. The threshold at 100/spl deg/C is 8.4 mA with an output power over 8 mW. |
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