Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition |
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| Authors: | W I Park Gyu-Chul Yi |
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| Affiliation: | (1) Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 790-784 Pohang, Korea |
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| Abstract: | We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as
low as 400°C. From the PL spectra of the films at 10–300 K, strong PL peaks due to free and bound excitons were observed.
The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the
Zn O films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1
MW/cm2, a strong, sharp peak was observed at 3.181 eV. |
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| Keywords: | ZnO metal organic chemical vapor deposition (MOCVD) photoluminescence SiO2/Si substrate stimulated emission |
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