| sol-gel法制备镉掺杂铁酸镧气敏材料 |
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| 引用本文： | 葛秀涛,李永红,刘杏芹.sol-gel法制备镉掺杂铁酸镧气敏材料[J].电子元件与材料,2009,28(1). |
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| 作者姓名： | 葛秀涛 李永红 刘杏芹 |
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| 作者单位： | 1. 滁州学院,化学与生命科学系,安徽,滁州,239012
2. 中国科学技术大学,材料科学与工程系,安徽,合肥,230026 |
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| 基金项目： | 安徵省教育厅自然科学基金 |
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| 摘 要： | 研究了气敏材料的制备条件、相组成、电导和气敏性能。结果表明:固溶体La1–xCdxFeO3(0≤x≤0.15)呈典型的p型半导体。270℃操作温度下,掺杂x(Cd2+)为25%的LaFeO3材料(700℃下热处理4h)对浓度为4.5×10–5mol·dm–3的C2H5OH的灵敏度达81.5。有望开发为一类新型的酒敏传感器。
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| 关 键 词： | 无机非金属材料 sol-gel法 镉掺杂LaFeO_3 电导 气敏性能 C_2H_5OH |
Preparation of Cd-doped LaFeO_3 gas-sensing materials by sol-gel method |
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| GE Xiutao,LI Yonghong,LIU Xingqin.Preparation of Cd-doped LaFeO_3 gas-sensing materials by sol-gel method[J].Electronic Components & Materials,2009,28(1). |
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| Authors: | GE Xiutao LI Yonghong LIU Xingqin |
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| Affiliation: | 1.Department of Chemistry and Life Science;Chuzhou Normal College;Chuzhou 239012;Anhui Province;China;2.Department of Materials Science and Engineering;University of Science and Technology of China;Hefei 230026;China |
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| Abstract: | Cd-doped LaFeO3 gas-sensitive materials were prepared by sol-gel method.Its preparation conditions,phase constituents,conductane and gas-sensing properties were investigated.The results demonstrate that La1–xCdxFeO3(0≤x≤ 0.15)solid solutions are typical p-type semiconductor.Its sensitivity is 81.5 to 4.5×10 –5 mol·dm –3 C2H5OH at an operating temperature of 270℃,when x(Cd 2+ )is 25%and heat-treating at 700℃for 4 h. |
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| Keywords: | C2H5OH |
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