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一种SLR结构陷波宽带滤波器的设计
引用本文:童荥贇,姬五胜,张志悦,戴 薇,崔俊海.一种SLR结构陷波宽带滤波器的设计[J].电讯技术,2019,59(10):1222-1226.
作者姓名:童荥贇  姬五胜  张志悦  戴 薇  崔俊海
作者单位:天津职业技术师范大学电子工程学院,天津300222;天津职业技术师范大学天线与微波技术研究所,天津300222;上海圣丹纳无线科技有限公司,上海,200444
基金项目:2018天津市自然科学基金(18JCYBJC16400);天津职业技术师范大学研究生创新基金(YC19-28);上海圣丹纳无线科技有限公司委托项目
摘    要:在枝节加载谐振器(Stub-loaded Resonator,SLR)的理论基础上设计了一种陷波宽带滤波器,应用于3.0~6.7 GHz频段。该滤波器由一个倒T形短路枝节加载谐振器(Short SLR,SSLR)和一个基于半波长SIR基本结构的阶跃阻抗枝节加载谐振器(Stepped Impedance SLR,SISLR)构成。与传统陷波滤波器相比,该滤波器没有采用传统的缺陷地结构或缺陷微带结构,其陷波特性由SISLR与SSLR耦合所致,能够实现更好的设计灵活性。对电路进行了仿真和实物制作,仿真结果表明,插入损耗和回波损耗分别优于0.3 dB和12.2 dB,陷波的中心频率位于5.8 GHz,其分数带宽为6.8%。测试结果与仿真结果基本一致,体现了良好的电路性能。

关 键 词:宽带滤波器  陷波特性  短路枝节加载谐振器(SSLR)  阶跃阻抗枝节加载谐振器(SISLR)

Design of a notched broadband filter using SLR structure
TONG Yingyun,JI Wusheng,ZHANG Zhiyue,DAI Wei and CUI Junhai.Design of a notched broadband filter using SLR structure[J].Telecommunication Engineering,2019,59(10):1222-1226.
Authors:TONG Yingyun  JI Wusheng  ZHANG Zhiyue  DAI Wei and CUI Junhai
Affiliation:1a.School of Electronic Engineering;1b.Institute of Antenna and Microwave Techniques,Tianjin University of Technology and Education,Tianjin 300222,China,1a.School of Electronic Engineering;1b.Institute of Antenna and Microwave Techniques,Tianjin University of Technology and Education,Tianjin 300222,China,1a.School of Electronic Engineering;1b.Institute of Antenna and Microwave Techniques,Tianjin University of Technology and Education,Tianjin 300222,China,1a.School of Electronic Engineering;1b.Institute of Antenna and Microwave Techniques,Tianjin University of Technology and Education,Tianjin 300222,China and Shanghai SAINTENNA Wireless Technology Co.,Ltd.,Shanghai 200444,China
Abstract:Based on the theory of stub-loaded resonator(SLR),a notched broadband filter is designed,which is applied in 3.0~6.7 GHz.The filter based on half-wavelength SIR basic structure consists of an inverted T-shaped short SLR(SSLR) and a stepped impedance SLR(SISLR).Different from the classical notched filters,the proposed filter does not employ traditional defected ground structure(DGS) or defected microstrip structure(DMS),its band-notched characteristics are caused by the coupling of SISLR and SSLR,thus achieving better design flexibility.The circuit is simulated and fabricated,and the simulation results show that the insertion loss and the return loss are better than 0.3 dB and 12.2 dB,respectively.Besides,the central frequency of the notched band is 5.8 GHz with the fractional bandwidth of 6.8%.The measured results are basically in agreement with the simulated results,which indicates a good circuit performance.
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