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集成电路时间延迟优化分析与模拟
引用本文:李文石,唐璞山,许杞安,章焱.集成电路时间延迟优化分析与模拟[J].微电子学,2004,34(6):655-657,662.
作者姓名:李文石  唐璞山  许杞安  章焱
作者单位:1. 苏州大学,电子信息学院,微电子学系,江苏,苏州,215021
2. 复旦大学,微电子学系,上海,200433
3. 世宏科技(苏州)公司,器件实验室,江苏,苏州,215021
摘    要:基于Elmore模型,优化分析了N级二维CMOS传输门链和Ⅳ门三维双栅SOI IC的时间延迟,给出了HSPICE模拟结果。研完表明,由相同尺寸管子构成的N级二维CMOS门链,当把N级分作每3级为一组并且以缓冲门相间隔时,总时延存在极小值;由宽度尺寸比为3的三级不等尺寸管子所构造的传输门链间隔以缓冲门,也存在最小时延;当N门三维双栅SOI IC分为6个器件层时,可获得最小的时间延迟。

关 键 词:Elmore模型  CMOS  传输门链  三维IC  时间延迟  HSPICE模拟
文章编号:1004-3365(2004)06-0655-03

Optimal Analysis and Simulation of Time Delay in Integrated Circuits
LI Wen-shi,TANG Pu-shan,XU Qi-an,ZHANG Yan.Optimal Analysis and Simulation of Time Delay in Integrated Circuits[J].Microelectronics,2004,34(6):655-657,662.
Authors:LI Wen-shi  TANG Pu-shan  XU Qi-an  ZHANG Yan
Affiliation:LI Wen-shi~1,TANG Pu-shan~2,XU Qi-an~3,ZHANG Yan~1
Abstract:Time delay of N-stage CMOS transmission gate chain and N-gate 3D double-gate SOI IC is optimally analyzed based on Elmore model, and HSPICE simulation results are presented. The study has come to the following conclusions: 1) with each buffer inserted into every other three stages in the N-stage CMOS transmission gate chain, there is minimum delay time; 2) under the same condition as 1 and with N/PMOS device width ratio =3 in every 3-stage, there is also minimum delay time; 3) with m = 6 device-layers for for N-gate 3D DG SOI IC, there is minimum delay time.
Keywords:Elmore model  CMOS  Transmission gate chain  3D IC  Time delay  HSPICE simulation
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