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双色量子阱红外探测器大面阵芯片的研制
引用本文:种明,马文全,苏艳梅,张艳冰,胡小燕,陈良惠.双色量子阱红外探测器大面阵芯片的研制[J].红外与激光工程,2007,36(6):782-784.
作者姓名:种明  马文全  苏艳梅  张艳冰  胡小燕  陈良惠
作者单位:1. 中国科学院半导体研究所,纳米光电子实验室,北京,100083
2. 华北光电技术研究所,北京,100015
基金项目:国家高技术研究发展计划(863计划)
摘    要:采用GaAs/AlGaAs和InGaAs/AlGaAs多量子阱,研制出了双色同像素读取结构的中波/长波量子阱红外探测器及160×128元中波/长波双色多量子阱红外探测器芯片。器件的材料结构生长是采用分子束外延技术,在5.08 cm半绝缘GaAs衬底上完成的。发展了双色大面阵制备工艺,二维光栅的制备使用标准光刻和离子束刻蚀技术。在77 K时,对量子阱红外探测器测试,得到中、长波段峰值探测率分别为Dλ*=(1.61~1.90)×1010 cmHz1/2W-1和(1.54~2.67)×1010 cmHz1/2W-1。中、长波段峰值波长分别为(2.7~3.8) μm和8.3 μm。

关 键 词:红外探测器  量子阱  双色  大面阵
文章编号:1007-2276(2007)06-0782-03
收稿时间:2007-02-10
修稿时间:2007-05-25

Dual band quantum well infrared photodetector large format array chips
CHONG Ming,MA Wen-quan,SU Yan-mei,ZHANG Yan-bing,HU Xiao-yan,CHEN Liang-hui.Dual band quantum well infrared photodetector large format array chips[J].Infrared and Laser Engineering,2007,36(6):782-784.
Authors:CHONG Ming  MA Wen-quan  SU Yan-mei  ZHANG Yan-bing  HU Xiao-yan  CHEN Liang-hui
Affiliation:1.Laboratory of Nano-Optoelectronics , Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China; 2. North China Research Institute of Electro-Optics, Beijing 100015, China
Abstract:The dual band quantum well infrared photodetector(QWIP) and the 160×128 large-format array chips are studied using GaAs/AlGaAs and InGaAs/AlGaAs multiple quantum well structures. The device structure is grown on a 5.08 cm semi-insulating GaAs wafer by molecular beam epitaxy (MBE). The processing technology of the dual band large format array chips is developed. The two dimensional (2D) surface grating reflector arrays are fabricated using the standard photolithography and ion beam etching (IBE) technologies. The measured peak detectivity Dλ* at 77 K is (1.61-1.90)×1010 cmHz1/2W-1 for the mid-wavelength of λp=2.7-3.8 μm and (1.54-2.67)×1010 cmHz1/2W-1 for the long-wavelength of λp=8.3 μm, respectively.
Keywords:Infrared photodetector  Quantum well  Dual band  Large format
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