Physical scaling rules for AlGaAs/GaAs power HBTs based on asmall-signal equivalent circuit |
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Authors: | Schaper U. Zwicknagl P. |
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Affiliation: | Corp. Technol., Siemens AG, Munich; |
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Abstract: | Physical scaling rules for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) containing 2-16 emitter fingers are demonstrated, the parameter extraction is based on a small signal equivalent circuit. The scaling parameters compare favorably with the measured data from the process control monitor |
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