| 硅中铜的深能级研究 |
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| 引用本文： | 陈开茅,王忠安. 硅中铜的深能级研究[J]. 电子与信息学报,1987,9(3): 256-263. |
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| 作者姓名： | 陈开茅 王忠安 |
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| 作者单位： | 北京大学物理系(陈开茅)，北京大学物理系(王忠安) |
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| 摘 要： | 本文用DLTS法测量了直拉硅和区熔硅中与铜有关的深能级及其俘获截面,测量了其中部分能级的空间分布,研究了区熔硅中与铜有关深能级的退火特性。结果表明在硅中与铜有关的深能级中不存在文献报道过的代位铜的三个受主态或一个施工和三个受主态,其中的多数能级是铜和晶格缺陷的络合物。
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| 收稿时间： | 1985-05-13 |
| 修稿时间： | 1985-07-30 |
DEEP LEVELS RELATED TO COPPER IN SILICON |
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| Chen Kaimao,Wang Zhongan. DEEP LEVELS RELATED TO COPPER IN SILICON[J]. Journal of Electronics & Information Technology,1987,9(3): 256-263. |
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| Authors: | Chen Kaimao Wang Zhongan |
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| Affiliation: | Department of Physics Beijing University |
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| Abstract: | The energy positions and carrier capture cross-sections of the deep levels related to copper in silicon are measured by DLTS. The annealing behaviour and spatial distributions of some of these levels are studied at the same time. The results show that there are not any triple acceptor or quadruple state corresponding to substimtional copper in silicon, which have been reported in the literature. Most of the deep levels related to copper in silicon are corresponding to complexes of copper and defects in silicon. |
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