| 高压LDMOS场极板的分析与设计 |
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| 引用本文： | 刘磊,高珊,陈军宁,柯导明,刘琦,周蚌艳. 高压LDMOS场极板的分析与设计[J]. 半导体技术, 2006, 31(10): 782-786 |
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| 作者姓名： | 刘磊 高珊 陈军宁 柯导明 刘琦 周蚌艳 |
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| 作者单位： | 安徽大学,电子科学与技术学院,合肥,230039;安徽大学,电子科学与技术学院,合肥,230039;安徽大学,电子科学与技术学院,合肥,230039;安徽大学,电子科学与技术学院,合肥,230039;安徽大学,电子科学与技术学院,合肥,230039;安徽大学,电子科学与技术学院,合肥,230039 |
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| 基金项目： | 国家自然科学基金 , 安徽省自然科学基金 |
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| 摘 要： | 场板是高压LDMOS中普遍使用的一种结终端技术,对单阶梯LDMOS场板的长度、其下方氧化层厚度以及场氧侵蚀厚度等参数进行了模拟和分析,在此基础上设计了一种新型体硅双阶梯场板LDMOS,并对其具体参数进行了细致的模拟和分析.模拟结果表明,双阶梯场板LDMOS的击穿电压比单阶梯场板LDMOS提高了15.3%,导通电阻降低了17.1%,电流驱动能力也提高了8.5%.
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| 关 键 词： | 横向扩散金属氧化物半导体 单阶梯场板 双阶梯场板 击穿电压 |
| 文章编号： | 1003-353X(2006)10-0782-05 |
| 收稿时间： | 2006-05-25 |
| 修稿时间： | 2006-05-25 |
Analysis and Design of Field Plates of High Voltage LDMOS |
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| LIU Lei,GAO Shan,CHEN Jun-ning,KE Dao-ming,LIU Qi,ZHOU Bang-yan. Analysis and Design of Field Plates of High Voltage LDMOS[J]. Semiconductor Technology, 2006, 31(10): 782-786 |
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| Authors: | LIU Lei GAO Shan CHEN Jun-ning KE Dao-ming LIU Qi ZHOU Bang-yan |
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| Affiliation: | College of Electronics and Technology, Anhui University, Hefei 230039, China |
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| Abstract: | Field plate is such a junction terminal technique that is employed prevalently in high voltage LDMOS designs. The parameters of single field plate such as its length, oxide thickness, and corroded field oxide thickness were simulated and analyzed. A new bulk silicon double field plate LDMOS was presented accompanied by its related simulations and analyses. Results from simulations show that the proposed structure can improve the breakdown by 15.3% and reduce the specific on-resistance by 17.1%. Meanwhile the current driving capability is enhanced by 8.5%. |
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| Keywords: | lateral double-diffused MOS(LDMOS) single field plate double field plate break- down voltage |
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