Intrinsic room temperature ferromagnetism in Zn0.92Co0.08O thin films prepared by pulsed laser deposition |
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| Authors: | Hanbin WangQiong He Hao Wang Xina WangJun Zhang Yong JiangQuan Li |
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| Affiliation: | a Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, PR Chinab School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, Chinac Department of Physics, Chinese University of Hong Kong, Hong Kong, China |
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| Abstract: | Zn0.92Co0.08O thin films were fabricated on p-type Si (100) and quartz substrates by pulsed laser deposition using a ZnCoO ceramic target. The structural and magnetic properties of the films were characterized by field emission scan electronic microscopy, x-ray diffraction, x-ray photoemission spectroscopy, UV-visible transmission spectra, extended x-ray absorption fine structure spectroscopy and physical property measurement system. Substitutional doping of Co2+ in ZnO lattice is demonstrated in the films. The as-deposited Zn0.92Co0.08O thin film displayed intrinsic room temperature ferromagnetism with saturation magnetization (Ms) of ~ 0.20μB/Co. The corresponding Ms increased to ~ 0.23μB/Co when annealed in vacuum and further to ~ 0.42μB/Co after annealed in hydrogen. In turn, the Ms dropped to the value of ~ 0.13μB/Co after annealed in oxygen. Our studies indicate that oxygen vacancy density plays a key role in mediating the ferromagnetism of the diluted magnetic semiconductor films. |
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| Keywords: | Diluted magnetic semiconductors Zinc oxide Co-doping Magnetic properties Defects X-ray absorption fine structure X-ray diffraction Scanning electron microscopy |
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