| 磁控溅射离子束流密度的研究 |
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| 引用本文： | 徐均琪,杭凌侠,蔡长龙. 磁控溅射离子束流密度的研究[J]. 真空科学与技术学报, 2004, 24(1): 74-76 |
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| 作者姓名： | 徐均琪 杭凌侠 蔡长龙 |
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| 作者单位： | 西安工业学院光电工程学院,西安,710032 |
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| 摘 要： | 磁控溅射镀膜技术由于具有显著的优点而得到了广泛的应用.磁控溅射离子束流密度的大小及分布状况,直接决定着薄膜质量的优劣.本文通过对比研究了普通磁控溅射(MS)和非平衡磁控溅射(UBMS)两种工作模式下,氩气流量、负偏压等工艺参数对离子束流密度大小的影响,测试了基片架附近的离子密度,分析讨论了测试结果.
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| 关 键 词： | 磁控溅射(MS) 非平衡磁控溅射(UBMS) 离子束流密度 工艺参数 |
| 文章编号： | 1672-7126(2004)01-0074-03 |
| 修稿时间： | 2003-07-22 |
Study on Ion Beam Density of Magnetron Sputtering |
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| Xu Junqi ,Hang Lingxia and Cai Changlong. Study on Ion Beam Density of Magnetron Sputtering[J]. JOurnal of Vacuum Science and Technology, 2004, 24(1): 74-76 |
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| Authors: | Xu Junqi Hang Lingxia Cai Changlong |
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| Affiliation: | Xu Junqi *,Hang Lingxia and Cai Changlong |
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| Abstract: | Influence of various factors,including gases mass glow and bias voltage,on the density and distribution of the ion beams in both conventional and unbalanced magnetron sputtering was experimentally studied to improve growth quality of thin film.The ion beam density in the vicinity of the substrate holder was measured and analyzed. |
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| Keywords: | Magnetron sputtering(MS) Unbalanced magnetron sputtering (UBMS) Ion flow density Technical parameter |
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