| 具有扩散阻挡层的n－GaAs欧姆接触 |
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| 引用本文： | 陈堂胜,陈克金. 具有扩散阻挡层的n－GaAs欧姆接触[J]. 固体电子学研究与进展, 1994, 0(3) |
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| 作者姓名： | 陈堂胜 陈克金 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 常规的ｎ－ＧａＡｓＡｕＧｅＮｉ／Ａｎ欧姆接触存在不少缺陷。本文提出在ＡｕＧｅＮｉ接触层与ＡＵ覆盖层之间加入扩散阻挡层ＷＮ。结果表明，新结构的金属化不仅降低了比接触电阻，而且具有良好的表面形貌；更重要的是，ＷＮ膜的引入有效地阻挡了接触层与Ａｕ覆盖层中各种元素原子之间的相互扩散，提高了接触的可靠性。
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| 关 键 词： | 砷化镓，欧姆接触，扩散阻挡层 |
The Ohmic Contact of n-GaAs with a Diffusion Barrier |
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| Chen Tangsheng,. The Ohmic Contact of n-GaAs with a Diffusion Barrier[J]. Research & Progress of Solid State Electronics, 1994, 0(3) |
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| Authors: | Chen Tangsheng |
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| Affiliation: | Chen Tangsheng; |
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| Abstract: | ssociated with conventional AuGeNi/Au ohmic contact of n-GaAs.A WN diffusion barrier added between AuGeNi and An overlay is reported in this paper.The results show that the new metallization decreases the specific contact resistance and has a better surface morphology.It is more important that the introduction of WN inhibites effectively the interdifffusion of atoms in contact layer and An overlay and raises the reliability of the contact. |
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| Keywords: | GaAs Ohmic Contact Diffusion Barrier |
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