Composition controlled synthesis and Raman analysis of Ge-rich Si(x)Ge(1-x) nanowires |
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Authors: | Meduri P Sumanasekera G U Chen Z Sunkara M K |
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Affiliation: | Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, USA. |
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Abstract: | Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimation of composition compared to that based on the absolute peak positions. The results showed that the fraction of Ge in the resulting Si(x)Ge(1-x) alloy nanowires is controlled by the vapor phase composition of Ge. |
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