Silicon carbide light-emitting diodes with epitaxial junctions |
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| Authors: | W. v. Münch W. Kürzinger I. Pfaffeneder |
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| Affiliation: | Institut A für Werkstoffkunde, Technische Universität Hannover, Germany |
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| Abstract: | Silicon carbide light-emitting diodes have been produced by vapour growth techniques and liquid-phase epitaxy. The fabrication methods for diodes with emission in the blue region of the spectrum are described. Emission spectra and efficiency data are presented for several types of diodes. |
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