Photoelectric memory in epitaxial n-GaAs films

The resistivity of thin Bi films on silicon was measured for films of various thicknesses. The experimentally obtained thickness dependence of the resistivity was compared with the result of a numerical calculation based on the equation which was proposed by Mayadas and Shatzkes. At 290 K the experimental curve fitted the numerical one with surface and grain boundary reflection coefficients of 0.6 and 0.12 respectively.