Tunneling in field induced diode in indium antimonide |
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Authors: | S. Margalit J. Shappir |
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Affiliation: | Electrical Engineering Department, Technion-Israel Institute of Technology, Haifa, Israel |
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Abstract: | Tunneling in the forward bias polarity of a field induced diode in indium antimonide is treated theoretically and experimentally. The theory leads to tunneling current-voltage characteristics with a region of negative resistance which are dependent upon the various parameters of the device, such as the gate voltage, substrate acceptor concentration and oxide thickness. A three-terminal device in which the gate voltage controls the tunneling I–V characteristics can thus be realized.Measurements were performed on an experimental device obtained by diffusion of cadmium into N-type InSb semiconductor. A chemically deposited SiO2 layer was used to isolate the evaporated CrAu gate electrode from the substrate. Deviations from theory are shown to result from the two-dimensional character of the device. |
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