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Epitaxial films of the low temperature modification of the compound Cu2Se
Authors:RB Shafizade  IV Ivanova  MM Kazinets
Affiliation:Institute of Physics, Narimanov Prospekt 33, Baku GSP 370602 U.S.S.R.
Abstract:Epitaxial films of the low temperature modification of Cu2Se deposited onto NaCl single-crystal substrates at 200°C and 400°C have been investigated. The diffraction pattern of this phase was indexed on the basis of a hexagonal lattice with unit cell parameters a = 7.07 and c = 6.68 A?. These parameters are related to the parameters of the f.c.c. phase by the relations ah = (√3√2) ac and ch = (2√3) ac.
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