Behavior of various silicon Schottky barrier diodes under heat treatment |
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| Authors: | P.C. Parekh R.C. Sirrine P. Lemieux |
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| Affiliation: | Transitron Electronic Corp., 168 Albion Street, Wakefield, MA 01880, USA |
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| Abstract: | Variations of Schottky forward voltage with heat treatment have been observed for AlPd2Si Si and Si-doped AlPd2Si Si Schottky barrier diodes. These variations have been reduced to a minimum by the use of a barrier metal such as TiW between Al and the silicided contacts. |
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