Electrical properties of be-implanted GaA1-xPx |
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| Authors: | Pallab K Chatterjee WV McLevige BG Streetman |
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| Affiliation: | Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, U.S.A. |
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| Abstract: | Hall effect and resistivity measurements on Be implanted GaAs1-xPx(x～0.38) indicate that essentially 100% doping efficiency may be obtained for normal Be concentrations after a 900°C anneal using either SiO2 or Si3N4 as an encapsulant. The temperature dependence of hole mobility in these samples exhibits impurity banding effects similar to those reported in heavily Zn doped GaAs. Hall effect measurements in conjunction with successive thin layer removal techniques indicate there is no significant diffusion of the implanted Be during anneal for a fluence of 6×1013 ions/cm2. |
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