Electrical and optical properties of AgInS2 |
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Authors: | K Okamoto K Kinoshita |
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Affiliation: | University of Electro-Communications, Tokyo, Japan |
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Abstract: | Crystal sizes of AgInS2 grown by a directional freezing depend on sulphur pressures at the preparation. The conductivity is only n-type and nominally undoped AgInS2 has the resistivity of 25 Ω-cm and the Hall mobility of 64 cm2/V sec. Sulphur vacancies of AgInS2 become electron-trapping levels in the forbidden band. It is obtained from the measurements of thermally stimulated current that the levels lie at ET1 = 0·19±0·01 eV and ET2 = 0·40±0·01 eV, and the concentrations depend on sulphur pressures at the crystal preparations. AuAgInS2 contacts operate as a Schottky barrier diode and the barrier height is 0·97 eV. AgInS2 has a dichroism because of its uniaxial lattice structure. The transition is direct for and indirect for , and the values for the energy gap are Eg⊥ = 1·88±0·01 eV and Eg∥ = 1·77±0·01 eV, respectively. |
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