Silicon p?n insulator-metal (p-n-I-M) devices |
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Authors: | Tatsuo Yamamoto Kazuhiko Kawamura Hiromi Shimizu |
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Affiliation: | Research Institute of Electronics, Shizouka University, Hamamatsu, Japan |
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Abstract: | Silicon p-n-I-M devices with thin insulating layers (), named MTIS devices, have been developed. The two terminal device shows an S-shaped negative resistance characteristics similar to a Schockley diode (or p-n-p-n diode). Typically the threshold and sustaining voltages are 10 ~ 15 and 1.3 ~ 2 volts, respectively. The former however can be controlled by optical illumination. Turn-on time including delay is less than 2 nsec and turn-off time ? 1 nsec or less. A thyristor-like device with its third terminal connected to the n-layer shows switching operation controllable by this terminal. A monolithic linear array of p-n-I-M diodes with 30 μm spacing operates as a shift register through coupling of adjacent diodes. Life of the two terminal devices recorded at present is over 1.5 × 104 hr. These devices can be applied to low power and high-speed electrical switching and also to optical switching and integrated logic circuits. |
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