Semiconductor Technology Laboratory, Oki Electric Industry Co., Ltd., 550-5 Higashiasakawa Hachioji, Tokyo 193, Japan
Abstract:
The effects of In0.52Al0.48 As window layers on p+n InP cell performances have been experimentally studied. The carrier collection efficiency is improved by introducing the In0.52Al0.48 As window layer and the short circuit current density increases. A conversion efficiency of 17.9% is obtained for a heteroface cell with a 50 nm thick window layer, while the efficiency of an InP cell without the window layer is 15.0% under air mass 1.5 condition.